2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 1 march 2008 2sc5200/fjl4315 npn epitaxial silicon transistor applications ? high-fidelity audio output amplifier ? general purpose power amplifier features ? high current capability: i c = 15a. ? high power dissipation : 150watts. ? high frequency : 30mhz. ? high voltage : v ceo =230v ? wide s.o.a for reliable operation. ? excellent gain linearity for low thd. ? complement to 2sa1943/fjl4215 . ? thermal and electrical sp ice models are available. ? same transistor is also available in: -- to3p package, 2sc5242/fja4313 : 130 watts -- to220 package, fjp5200 : 80 watts -- to220f package, fjpf5200 : 50 watts absolute maximum ratings* t a = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. thermal characteristics* t a =25 c unless otherwise noted * device mounted on minimum pad size h fe classification symbol parameter ratings units bv cbo collector-base voltage 230 v bv ceo collector-emitter voltage 230 v bv ebo emitter-base voltage 5 v i c collector current(dc) 15 a i b base current 1.5 a p d total device dissipation(t c =25 c ) derate above 25 c 150 1.04 w w/ c t j , t stg junction and storage temperature - 50 ~ +150 c symbol parameter max. units r jc thermal resistance, junction to case 0.83 c/w classification r o h fe1 55 ~ 110 80 ~ 160 1.base 2.collector 3.emitter 1 to-264
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 2 electrical characteristics* t a =25 c unless otherwise noted * pulse test: pulse width=20 s, duty cycle 2% ordering information symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =5ma, i e =0 230 v bv ceo collector-emitter breakdown voltage i c =10ma, r be = 230 v bv ebo emitter-base breakdown voltage i e =5ma, i c =0 5 v i cbo collector cut-off current v cb =230v, i e =0 5.0 a i ebo emitter cut-off current v eb =5v, i c =0 5.0 a h fe1 dc current gain v ce =5v, i c =1a 55 160 h fe2 dc current gain v ce =5v, i c =7a 35 60 v ce (sat) collector-emitter saturation voltage i c =8a, i b =0.8a 0.4 3.0 v v be (on) base-emitter on voltage v ce =5v, i c =7a 1.0 1.5 v f t current gain bandwidth product v ce =5v, i c =1a 30 mhz c ob output capacitance v cb =10v, f=1mhz 200 pf part number marking package packing method remarks 2sc5200rtu c5200r to-264 tube hfe1 r grade 2sc5200otu c5200o to-264 tube hfe1 o grade FJL4315RTU j4315r to-264 tube hfe1 r grade fjl4315otu j4315o to-264 tube hfe1 o grade
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 3 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. base-emitter on voltage figure 6. thermal resistance 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 i b = 0 i b =200ma i b = 120ma i b = 140ma i b = 160ma i b = 180ma i b = 100ma i b = 60ma i b = 80ma i b = 40ma i c [a], collector current v ce [v], collector-emitter voltage 110 1 10 100 vce=5v tj=-25 o c tj=25 o c tj=125 o c h fe , dc current gain ic[a], collector current 0.1 1 10 100 1000 10000 ic=10ib tj=-25 o c tj=25 o c tj=125 o c vbe(sat)[mv], saturation voltage ic[a], collector current 0.1 1 10 1 10 100 1000 10000 ic=10ib tj=-25? tj=25? tj=125? vce(sat)[mv], saturation voltage ic[a], collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 12 v ce = 5v i c [a], collector current v be [v], base-emitter voltage 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 transient thermal resistance, r thjc [ o c / w] pulse duration [sec]
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 4 typical characteristics figure 7. power derating figure 8. safe operating area 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 p c [w], power dissipation t c [ o c], case temperature 1 10 100 0.01 0.1 1 10 100 *single nonrepetitive pulse t c =25[ o c] 10ms* 100ms* dc i c max. (pulsed*) i c max. (dc) i c [a], collector current v ce [v], collector-emitter voltage
2sc5200/fjl4315 ? npn epit axial silicon transistor ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 5 package dimensions 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] 4.90 0.20 20.00 0.20 (8.30) (8.30) (1.00) (0.50) (2.00 ) (7.00) (r1.00) (r2.00) ?.30 0.20 (7.00) (1.50) (1.50) (1.50) 2.50 0.20 3.00 0.20 2.80 0.3 0 1.00 +0.25 ?.10 0.60 +0.25 ?.10 1.50 0.20 6.00 0.20 20.00 0.20 20.00 0.50 5.00 0.20 3 .50 0.20 2.50 0.10 (9.00) (9.00) (2.00) ( 1.50) (0.15) ( 2.80) (4.00) (11.00) to-264 dimensions in millimeters
2sc5200/fjl4315 npn epit axial silicon transistor 2sc5200/fjl4315 ? 2008 fairchild semiconductor corporation www.fairchildsemi.com 2sc5200/fjl4315 rev. a2 6 rev. i31 trademarks the following are registered and unregister ed trademarks and service marks fairchild se miconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make cha nges without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any prod uct or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others . these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif ically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as cr itical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? build it now? coreplus? crossvolt ? ctl? current transfer logic? ecospark ? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fps? frfet ? global power resource sm green fps? green fps? e-series? gto? i-lo ? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motion-spm? optologic ? optoplanar ? ? pdp-spm? power220 ? power247 ? poweredge ? power-spm? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? the power franchise ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? serdes? uhc ? unifet? vcx? datasheet identification product status definition advance information formative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains pr eliminary data; supplementary data will be pub- lished at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains fi nal specifications. fairch ild semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains s pecifications on a produc t that has been discontin- ued by fairchild semiconductor. the data sheet is printed for reference infor- mation only.
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